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C3216 TFS52 BX2479W R4045PT 22182 CLP1351 07500 ATA5781
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  Datasheet File OCR Text:
 MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER Features
* * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0
TO-3P Dim A Min 3.20 4.59 20.80 19.70 2.10 0.51 15.90 1.70 3.10AE 3.50 5.20 1.12 1.93 2.97 11.70 Max 3.50 5.16 21.30 20.20 2.40 0.76 16.40 2.70 3.30AE 4.51 5.70 1.22 2.18 3.22 12.80
H S
R P* *2 Places N Q L G
A B
B C D E
J
K
C
G H J K L M N P Q R S
Mechanical Data
* * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Marking: Type Number Weight: 5.6 grams (approx.) Mounting Position: Any
D
E M M
4.30 Typical
All Dimensions in mm @ TA = 25C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage @ TC = 125C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop per element (Note 3) @ IF = 20A, TC = 25C @ IF = 20A, TC = 125C Average Rectified Output Current Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJc dV/dt Tj, TSTG
MBR 3030PT 30 21
MBR 3035PT 35 24.5
MBR 3040PT 40 28 30
MBR 3045PT 45 31.5
MBR 3050PT 50 35
MBR 3060PT 60 42
Unit V V A A
200 0.65 0.60 1.0 60 700 1.4 10,000 -65 to +150 2.0 0.75 0.65 5.0 100
V mA pF K/W V/s C
Peak Reverse Current @ TC = 25C at Rated DC Blocking Voltage, per element @ TC = 125C Typical Junction Capacitance Typical Thermal Resistance Junction to Case Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: (Note 2) (Note 1)
1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Pulse width 300 ms, duty cycle 2%.
DS23017 Rev. E-2
1 of 2
MBR3030PT - MBR3060PT
24
IF, INSTANTANEOUS FORWARD CURRENT (A)
30
100
I(AV), AVERAGE FWD CURRENT (A)
MBR 3030PT - MBR 3045PT
10
18
12
MBR 3050PT - MBR 3060PT
1.0
6
0
0.1 0 0.2 0.4
Tj = 25C Pulse width = 300s 2% duty cycle
0
50
100
150
0.6
0.8
TC, CASE TEMPERATURE (C) Fig. 1 Fwd Current Derating Curve
VF, INSTANTANEOUS F0RWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
300
4000
Tj = 25C 8.3ms Single half-wave JEDEC Method
IFSM, PEAK FWD SURGE CURRENT (A)
Tj = 25C f = 1MHz
250 200 150
Cj, CAPACITANCE (pF)
1000
100
50 0 1
100
100 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
10
Tj = 125C
1.0
Tj = 75C
0.1
Tj = 25C
0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics
DS23017 Rev. E-2
2 of 2
MBR3030PT - MBR3060PT


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